SiC power semiconductor "SiC-SBD series"
Replace with silicone! Maintains high-speed switching even at high temperatures, reducing power loss!
The "SiC-SBD series" is a Schottky barrier diode made from SiC (silicon carbide) material. It supports low resistance and high-speed switching, which can reduce switching losses. Additionally, it can operate stably at high temperatures, enabling the miniaturization of power devices. It is effective in high-speed switching applications such as PFC circuits, motor drive circuits, and inverter circuits. 【Features】 ■ Reduction of switching losses due to high-speed switching characteristics ■ Improvement of power conversion efficiency and capability for high frequency ■ Reduction of leakage current at high temperatures ■ Prevention of thermal runaway due to increased current *For more details, please refer to the catalog. Feel free to contact us with any inquiries.
- Company：オリナス 東京営業所、名古屋営業所、京都営業所、大阪営業所、香港
- Price：Other
